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| ? semiconductor components industries, llc, 2012 january, 2012 ? rev. 7 1 publication order number: nsbc114epdxv6/d nsbc114epdxv6t1g, nsvbc114epdxv6t1g series dual bias resistor transistors npn and pnp silicon surface mount transistors with monolithic bias resistor network the brt (bias resistor transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base ? emitter resistor. these digital transistors are designed to replace a single device and its external resistor bias network. the brt eliminates these individual components by integrating them into a single device. in the nsbc114epdxv6t1 series, two complementary brt devices are housed in the sot ? 563 package which is ideal for low power surface mount applications where board space is at a premium. features ? simplifies circuit design ? reduces board space ? reduces component count ? available in 8 mm, 7 inch tape and reel ? aec ? q101 qualified and ppap capable ? nsv prefix for automotive and other applications requiring unique site and control change requirements ? these are pb ? free devices* maximum ratings (t a = 25 c unless otherwise noted, common for q 1 and q 2 , ? minus sign for q 1 (pnp) omitted) rating symbol value unit collector-base voltage v cbo 50 vdc collector-emitter voltage v ceo 50 vdc collector current i c 100 madc stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. device marking information see specific marking information in the device marking table on page 2 of this data sheet. q 1 r 1 r 2 r 2 r 1 q 2 (1) (2) (3) (4) (5) (6) http://onsemi.com sot ? 563 case 463a plastic xx = specific device code (see table on page 2) m = date code =pb ? free package marking diagram xx m device package shipping ? ordering information nsbc114epdxv6t1g sot ? 563 4 mm pitch 4000/tape & reel nsbc114epdxv6t5g sot ? 563 2 mm pitch 8000/tape & reel (note: microdot may be in either location) ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d.
nsbc114epdxv6t1g, nsvbc114epdxv6t1g series http://onsemi.com 2 thermal characteristics characteristic (one junction heated) symbol max unit total device dissipation t a = 25 c (note 1) derate above 25 c (note 1) p d 357 2.9 mw mw/ c thermal resistance (note 1) junction-to-ambient r ja 350 c/w characteristic (both junctions heated) symbol max unit total device dissipation t a = 25 c (note 1) derate above 25 c (note 1) p d 500 4.0 mw mw/ c thermal resistance (note 1) junction-to-ambient r ja 250 c/w junction and storage temperature t j , t stg ? 55 to +150 c 1. fr ? 4 @ minimum pad device marking and resistor values device package marking r1 (k ) r2 (k ) nsbc114epdxv6t1g sot ? 563 11 10 10 nsbc124epdxv6t1g sot ? 563 12 22 22 nsbc144epdxv6t1g sot ? 563 13 47 47 nsvb144epdxv6t1g sot ? 563 13 47 47 nsbc114ypdxv6t1g sot ? 563 14 10 47 nsvbc114ydxv6t1g sot ? 563 14 10 47 nsbc114tpdxv6t1g (note 2) sot ? 563 15 10 nsbc143tpdxv6t1g (note 2) sot ? 563 16 4.7 nsvb143tpdxv6t1g (note 2) sot ? 563 16 4.7 NSBC113EPDXV6T1G (note 2) sot ? 563 30 1.0 1.0 nsbc123epdxv6t1g (note 2) sot ? 563 31 2.2 2.2 nsbc143epdxv6t1g (note 2) sot ? 563 32 4.7 4.7 nsbc143zpdxv6t1g (note 2) sot ? 563 33 4.7 47 nsvb143zpdxv6t1g (note 2) sot ? 563 33 4.7 47 nsbc124xpdxv6t1g (note 2) sot ? 563 34 22 47 nsvb124xpdxv6t1g (note 2) sot ? 563 34 22 47 nsbc123jpdxv6t1g (note 2) sot ? 563 35 2.2 47 nsvb123jpdxv6t1g (note 2) sot ? 563 35 2.2 47 nsbc114epdxv6t1g, nsvbc114epdxv6t1g series http://onsemi.com 3 electrical characteristics (t a = 25 c unless otherwise noted, common for q 1 and q 2 , ? minus sign for q 1 (pnp) omitted) characteristic symbol min typ max unit off characteristics collector-base cutoff current (v cb = 50 v, i e = 0) i cbo ? ? 100 nadc collector-emitter cutoff current (v ce = 50 v, i b = 0) i ceo ? ? 500 nadc emitter-base cutoff current (v eb = 6.0 v, i c = 0) nsbc114epdxv6t1g nsbc124epdxv6t1g nsbc144epdxv6t1g, nsvb144epdxv6t1g nsbc114ypdxv6t1g, nsvbc114ydxv6t1g nsbc114tpdxv6t1g nsbc143tpdxv6t1g, nsvb143tpdxv6t1g NSBC113EPDXV6T1G nsbc123epdxv6t1g nsbc143epdxv6t1g nsbc143zpdxv6t1g, nsvb143zpdxv6t1g nsbc124xpdxv6t1g, nsvb124xpdxv6t1g nsbc123jpdxv6t1g, nsvb123jpdxv6t1g i ebo ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 madc collector-base breakdown voltage (i c = 10 a, i e = 0) v (br)cbo 50 ? ? vdc collector-emitter breakdown voltage (note 3) (i c = 2.0 ma, i b = 0) v (br)ceo 50 ? ? vdc on characteristics (note 3) dc current gain (v ce = 10 v, i c = 5.0 ma) nsbc114epdxv6t1g nsbc124epdxv6t1g nsbc144epdxv6t1g, nsvb144epdxv6t1g nsbc114ypdxv6t1g, nsvbc114ydxv6t1g nsbc114tpdxv6t1g nsbc143tpdxv6t1g, nsvb143tpdxv6t1g NSBC113EPDXV6T1G nsbc123epdxv6t1g nsbc143epdxv6t1g nsbc143zpdxv6t1g, nsvb143zpdxv6t1g nsbc124xpdxv6t1g, nsvb124xpdxv6t1g nsbc123jpdxv6t1g, nsvb123jpdxv6t1g h fe 35 60 80 80 160 160 3.0 8.0 15 80 80 80 60 100 140 140 350 350 5.0 15 30 200 150 140 ? ? ? ? ? ? ? ? ? ? ? ? collector-emitter saturation voltage (i c = 10 ma, i b = 0.3 ma) nsbc114epdxv6t1g nsbc124epdxv6t1g nsbc144epdxv6t1g, nsvb144epdxv6t1g nsbc114ypdxv6t1g, nsvbc114ydxv6t1g nsbc143tpdxv6t1g, nsvb143tpdxv6t1g nsbc123jpdxv6t1g, nsvb123jpdxv6t1g (i c = 10 ma, i b = 5 ma) NSBC113EPDXV6T1G nsbc123epdxv6t1g (i c = 10 ma, i b = 1 ma) nsbc114tpdxv6t1g nsbc143epdxv6t1g nsbc143zpdxv6t1g, nsvb143zpdxv6t1g nsbc124xpdxv6t1g, nsvb124xpdxv6t1g v ce(sat) ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 vdc 2. new resistor combinations. updated curves to follow in subsequent data sheets. 3. pulse test: pulse width < 300 s, duty cycle < 2.0% nsbc114epdxv6t1g, nsvbc114epdxv6t1g series http://onsemi.com 4 electrical characteristics (t a = 25 c unless otherwise noted, common for q 1 and q 2 , ? minus sign for q 1 (pnp) omitted) characteristic unit max typ min symbol on characteristics (note 3) output voltage (on) (v cc = 5.0 v, v b = 2.5 v, r l = 1.0 k ) nsbc114epdxv6t1g nsbc124epdxv6t1g nsbc114ypdxv6t1g, nsvbc114ydxv6t1g nsbc114tpdxv6t1g nsbc143tpdxv6t1g, nsvb143tpdxv6t1g NSBC113EPDXV6T1G nsbc123epdxv6t1g nsbc143epdxv6t1g nsbc143zpdxv6t1g, nsvb143zpdxv6t1g nsbc124xpdxv6t1g, nsvb124xpdxv6t1g nsbc123jpdxv6t1g, nsvb123jpdxv6t1g (v cc = 5.0 v, v b = 3.5 v, r l = 1.0 k ) nsbc144epdxv6t1g, nsvb144epdxv6t1g v ol ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 vdc output voltage (off) (v cc = 5.0 v, v b = 0.5 v, r l = 1.0 k ) nsbc114epdxv6t1g nsbc124epdxv6t1g nsbc144epdxv6t1g, nsvb144epdxv6t1g nsbc114ypdxv6t1g, nsvbc114ydxv6t1g nsbc143tpdxv6t1g, nsvb143tpdxv6t1g nsbc143zpdxv6t1g, nsvb143zpdxv6t1g nsbc124xpdxv6t1g, nsvb124xpdxv6t1g nsbc123jpdxv6t1g, nsvb123jpdxv6t1g (v cc = 5.0 v, v b = 0.050 v, r l = 1.0 k ) NSBC113EPDXV6T1G (v cc = 5.0 v, v b = 0.25 v, r l = 1.0 k ) nsbc114tpdxv6t1g nsbc123epdxv6t1g nsbc143epdxv6t1g v oh 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? vdc input resistor nsbc114epdxv6t1g nsbc124epdxv6t1g nsbc144epdxv6t1g, nsvb144epdxv6t1g nsbc114ypdxv6t1g, nsvbc114ydxv6t1g nsbc114tpdxv6t1g nsbc143tpdxv6t1g, nsvb143tpdxv6t1g NSBC113EPDXV6T1G nsbc123epdxv6t1g nsbc143epdxv6t1g nsbc143zpdxv6t1g, nsvb143zpdxv6t1g nsbc124xpdxv6t1g, nsvb124xpdxv6t1g nsbc123jpdxv6t1g, nsvb123jpdxv6t1g r1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 k resistor ratio nsbc114epdxv6t1g nsbc124epdxv6t1g nsbc144epdxv6t1g, nsvb144epdxv6t1g nsbc114ypdxv6t1g, nsvbc114ydxv6t1g nsbc114tpdxv6t1g nsbc143tpdxv6t1g, nsvb143tpdxv6t1g NSBC113EPDXV6T1G nsbc123epdxv6t1g nsbc143epdxv6t1g nsbc143zpdxv6t1g, nsvb143zpdxv6t1g nsbc124xpdxv6t1g, nsvb124xpdxv6t1g nsbc123jpdxv6t1g, nsvb123jpdxv6t1g r1/r2 0.8 0.8 0.8 0.17 ? ? 0.8 0.8 0.8 0.055 0.38 0.038 1.0 1.0 1.0 0.21 ? ? 1.0 1.0 1.0 0.1 0.47 0.047 1.2 1.2 1.2 0.25 ? ? 1.2 1.2 1.2 0.185 0.56 0.056 2. new resistor combinations. updated curves to follow in subsequent data sheets. 3. pulse test: pulse width < 300 s, duty cycle < 2.0% nsbc114epdxv6t1g, nsvbc114epdxv6t1g series http://onsemi.com 5 figure 1. derating curve 300 200 150 100 50 0 ? 50 0 50 100 150 t a , ambient temperature ( c) r ja = 490 c/w 250 p d , power dissipation (mw) nsbc114epdxv6t1g, nsvbc114epdxv6t1g series http://onsemi.com 6 typical electrical characteristics ? nsbc114epdxv6t1 npn transistor v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 2. v ce(sat) versus i c 10 02030 i c , collector current (ma) 10 1 0.1 t a =-25 c 75 c 25 c 40 50 figure 3. dc current gain figure 4. output capacitance 1 0.1 0.01 0.001 020 40 50 i c , collector current (ma) v ce(sat) , maximum collector voltage (volts) 1000 100 10 1 10 100 i c , collector current (ma) t a =75 c 25 c -25 c t a =-25 c 25 c figure 5. output current versus input voltage 75 c 25 c t a =-25 c 100 10 1 0.1 0.01 0.001 01 234 v in , input voltage (volts) 56 78 910 figure 6. input voltage versus output current 50 010203040 4 3 1 2 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) 75 c v ce = 10 v f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 nsbc114epdxv6t1g, nsvbc114epdxv6t1g series http://onsemi.com 7 typical electrical characteristics ? nsbc114epdxv6t1 pnp transistor v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 7. v ce(sat) versus i c 100 10 1 0.1 0.01 0.001 0 v in , input voltage (volts) t a =-25 c 25 c 1 2 3 4 5 6 7 8 9 10 figure 8. dc current gain figure 9. output capacitance figure 10. output current versus input voltage figure 11. input voltage versus output current 0.01 20 i c , collector current (ma) v ce(sat) , maximum collector voltage (volt s 0.1 1 0 40 50 1000 1 10 100 i c , collector current (ma) t a =75 c -25 c 100 10 0 i c , collector current (ma) 0.1 1 10 100 10 20 30 40 50 t a =-25 c 25 c 75 c 75 c i c /i b = 10 50 010203040 4 3 1 2 v r , reverse bias voltage (volts) c ob , capacitance (pf) 0 t a =-25 c 25 c 75 c 25 c v ce = 10 v f = 1 mhz l e = 0 v t a = 25 c v o = 5 v v o = 0.2 v nsbc114epdxv6t1g, nsvbc114epdxv6t1g series http://onsemi.com 8 typical electrical characteristics ? nsbc124epdxv6t1 npn transistor v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 12. v ce(sat) versus i c figure 13. dc current gain figure 14. output capacitance figure 15. output current versus input voltage 1000 10 i c , collector current (ma) t a =75 c 25 c -25 c 100 10 1 100 75 c 25 c 100 0 v in , input voltage (volts) 10 1 0.1 0.01 0.001 246810 t a =-25 c 0 i c , collector current (ma) 100 t a =-25 c 75 c 10 1 0.1 10 20 30 40 50 25 c figure 16. input voltage versus output current 0.001 v ce(sat) , maximum collector voltage (volts ) t a =-25 c 75 c 25 c 0.01 0.1 1 40 i c , collector current (ma) 0 20 50 50 0 10 203040 4 3 2 1 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) i c /i b = 10 v ce = 10 v f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v nsbc114epdxv6t1g, nsvbc114epdxv6t1g series http://onsemi.com 9 typical electrical characteristics ? nsbc124epdxv6t1 pnp transistor v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 17. v ce(sat) versus i c figure 18. dc current gain 1000 10 i c , collector current (ma) 100 10 1 100 figure 19. output capacitance i c , collector current (ma) 0 10 20 30 v o = 0.2 v t a =-25 c 75 c 100 10 1 0.1 40 50 figure 20. output current versus input voltage 100 10 1 0.1 0.01 0.001 0 1 2 3 4 v in , input voltage (volts) 5 6 7 8 9 10 figure 21. input voltage versus output current 0.01 v ce(sat) , maximum collector voltage (volts) 0.1 1 10 40 i c , collector current (ma) 0 20 50 75 c 25 c t a =-25 c 50 010 20 30 40 4 3 2 1 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) 25 c i c /i b = 10 25 c -25 c v ce = 10 v t a =75 c f = 1 mhz l e = 0 v t a = 25 c 75 c 25 c t a =-25 c v o = 5 v nsbc114epdxv6t1g, nsvbc114epdxv6t1g series http://onsemi.com 10 typical electrical characteristics ? nsbc144epdxv6t1, nsvb144epdxv6t1 npn transistor v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 22. v ce(sat) versus i c 0246810 100 10 1 0.1 0.01 0.001 v in , input voltage (volts) t a =-25 c 75 c 25 c figure 23. dc current gain figure 24. output capacitance 100 10 1 0.1 010 203040 50 i c , collector current (ma) figure 25. output current versus input voltage 1000 10 i c , collector current (ma) t a =75 c 25 c -25 c 100 10 1 100 25 c 75 c 50 010203040 1 0.8 0.6 0.4 0.2 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) figure 26. input voltage versus output current 0 20 40 50 10 1 0.1 0.01 i c , collector current (ma) 25 c 75 c v ce(sat) , maximum collector voltage (volts ) v ce = 10 v f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 t a =-25 c t a =-25 c nsbc114epdxv6t1g, nsvbc114epdxv6t1g series http://onsemi.com 11 typical electrical characteristics ? nsbc144epdxv6t1, nsvb144epdxv6t1 pnp transistor v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 27. v ce(sat) versus i c i c , collector current (ma) 1 0.1 0.01 010203040 75 c 25 c v ce(sat) , maximum collector voltage (volts) figure 28. dc current gain 1000 100 10 1 10 100 i c , collector current (ma) -25 c figure 29. output capacitance figure 30. output current versus input voltage 100 10 1 0.1 0.01 0.001 010 25 c v in , input voltage (volts) -25 c 50 010203040 1 0.8 0.6 0.4 0.2 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) 123456 789 figure 31. input voltage versus output current 100 10 1 0.1 0 10 20 30 40 i c , collector current (ma) t a =-25 c 25 c 75 c 50 i c /i b = 10 t a =-25 c 25 c t a =75 c f = 1 mhz l e = 0 v t a = 25 c v o = 5 v t a =75 c v o = 0.2 v nsbc114epdxv6t1g, nsvbc114epdxv6t1g series http://onsemi.com 12 typical electrical characteristics ? nsbc114ypdxv6t1, nsvbc114ypdxv6t1 npn transistor 10 1 0.1 01020304050 100 10 1 0246810 4 3.5 3 2.5 2 1.5 1 0.5 0 02468101520253035404550 v r , reverse bias voltage (volts) v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 32. v ce(sat) versus i c i c , collector current (ma) 020406080 v ce(sat) , maximum collector voltage (volts) figure 33. dc current gain 1 10 100 i c , collector current (ma) figure 34. output capacitance figure 35. output current versus input voltage v in , input voltage (volts) c ob , capacitance (pf) figure 36. input voltage versus output current i c , collector current (ma) 1 0.1 0.01 0.001 -25 c 25 c t a =75 c v ce = 10 300 250 200 150 100 50 0 2468 1520405060708090 f = 1 mhz l e = 0 v t a = 25 c 25 c i c /i b = 10 t a =-25 c t a =75 c 25 c -25 c v o = 0.2 v t a =-25 c 75 c v o = 5 v 25 c 75 c nsbc114epdxv6t1g, nsvbc114epdxv6t1g series http://onsemi.com 13 typical electrical characteristics ? nsbc114ypdxv6t1, nsvbc114ypdxv6t1 pnp transistor 10 1 0.1 010 20 30 4050 100 10 1 0 246810 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 1520 2530 3540 4550 v r , reverse bias voltage (volts) v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 37. v ce(sat) versus i c i c , collector current (ma) 020406080 v ce(sat) , maximum collector voltage (volts) figure 38. dc current gain 1 10 100 i c , collector current (ma) figure 39. output capacitance figure 40. output current versus input voltage v in , input voltage (volts) c ob , capacitance (pf) figure 41. input voltage versus output current i c , collector current (ma) 1 0.1 0.01 0.001 -25 c 25 c t a =75 c v ce = 10 v 180 160 140 120 100 80 60 40 20 0 2 4 6 8 15 20 40 50 60 70 80 90 f = 1 mhz l e = 0 v t a = 25 c 25 c i c /i b = 10 t a =-25 c t a =75 c 25 c -25 c v o = 5 v v o = 0.2 v 25 c t a =-25 c 75 c 75 c nsbc114epdxv6t1g, nsvbc114epdxv6t1g series http://onsemi.com 14 typical electrical characteristics ? nsbc114tpdxv6t1 figure 42. dc current gain ? pnp i c , collector current (ma) 1.0 10 100 h fe , dc current gain (normalized) 1000 100 figure 43. dc current gain ? npn i c , collector current (ma) 1.0 10 100 h fe , dc current gain (normalized) 1000 100 t a = 25 c v ce = 5.0 v v ce = 10 v t a = 25 c v ce = 5.0 v v ce = 10 v typical electrical characteristics ? nsbc143tpdxv6t1, nsvb143tpdxv6t1 figure 44. dc current gain ? pnp i c , collector current (ma) 1.0 10 100 h fe , dc current gain (normalized) 1000 100 figure 45. dc current gain ? npn i c , collector current (ma) 1.0 10 100 h fe , dc current gain (normalized) 1000 100 t a = 25 c v ce = 5.0 v v ce = 10 v t a = 25 c v ce = 5.0 v v ce = 10 v nsbc114epdxv6t1g, nsvbc114epdxv6t1g series http://onsemi.com 15 package dimensions sot ? 563, 6 lead case 463a ? 01 issue f h e dim min nom max millimeters a 0.50 0.55 0.60 b 0.17 0.22 0.27 c d 1.50 1.60 1.70 e 1.10 1.20 1.30 e 0.5 bsc l 0.10 0.20 0.30 1.50 1.60 1.70 0.020 0.021 0.023 0.007 0.009 0.011 0.059 0.062 0.066 0.043 0.047 0.051 0.02 bsc 0.004 0.008 0.012 0.059 0.062 0.066 min nom max inches e m 0.08 (0.003) x b 6 5 pl a c ? x ? ? y ? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. d e y 12 3 4 5 l 6 1.35 0.0531 0.5 0.0197 mm inches scale 20:1 0.5 0.0197 1.0 0.0394 0.45 0.0177 0.3 0.0118 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e 0.08 0.12 0.18 0.003 0.005 0.007 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 nsbc114epdxv6/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative |
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